胡海啸

发布者:太阳成集团tyc33455cc发布时间:2021-11-24浏览次数:2399


1. 个人情况

胡海啸,男,1992年生,博士,讲师

Email: huhaixiao@qlu.edu.cn

2. 教育背景

2015-2020  山东大学    晶体材料研究所        材料学      工学博士

2011-2015  济南大学  太阳成集团tyc33455cc  材料科学与工程  工学学士

3. 工作经历

2021.01-至今      齐鲁工业大学太阳成集团tyc33455cc    讲师

4. 研究方向

GaN单晶生长、加工及器件制备研究

5. 代表性SCI论文

至今已发表SCI论文9篇,以第一作者发表SCI学术论文3篇,另以合作者身份发表SCI论文6篇。

(1) Haixiao Hu; Bin Chang; Xiucai Sun; Qin Huo; Baoguo Zhang; Yanlu Li; Yongliang Shao; Lei Zhang; Yongzhong Wu and Xiaopeng Hao; Intrinsic Properties of Macroscopically Tuned Gallium Nitride Single-Crystalline Facets for Electrocatalytic Hydrogen Evolution. Chemistry-A European Journal, 2019, 25, 10420-10426.

(2) Haixiao Hu; Baoguo Zhang; Lei Liu; Deqin Xu; Yongliang Shao; Yongzhong Wu; and Xiaopeng Hao; Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process. Crystals, 2020, 10,141.

(3) Haixiao Hu; Baoguo Zhang; Yongzhong Wu; Yongliang Shao; Lei Liu and Xiaopeng Hao; High Quality GaN Crystal Grown on Laser Decomposed GaN-Sapphire Substrate and Its Application in Photodetector. Physica Status Solidi A, 2020,217,2000380.

(4) Baoguo Zhang; Yongzhong Wu; Lei Zhang; Qin Huo; Haixiao Hu; Fukun Ma; Mingzhi Yang; Dong Shi; Yongliang Shao; Xiaopeng Hao; Growth of high-quality GaN crystals on a BCN nanosheet-coated substrate by hydride vapor phase epitaxy. CrystEngComm, 2019, 21(8), 1302-1308.

(5) Ruixian Yu; Baoguo Zhang; Lei Zhang; Yongzhong Wu; Haixiao Hu; Lei Liu; Yongliang Shao; Xiaopeng Hao;From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors. 2019, 7, 14116-14122.

(6) Qin Huo; Yongliang Shao; Yongzhong Wu; Baoguo Zhang; Haixiao Hu; Xiaopeng Hao; High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE. Scientific Reports, 2018, 8, 3166.

(7) Yuan Tian; Yongliang Shao; Xiaopeng Hao; Yongzhong Wu; Lei Zhang; Yuanbin Dai; Qin Huo; Baoguo Zhang; Haixiao Hu; Preparation and optimization of freestanding GaN using low-temperature GaN layer. Frontiers of Materials Science, 2019, 13, 314-322.

(8) Lei Zhang; Shouzhi Wang; Yongliang Shao; Yongzhong Wu; Changlong Sun; Qin Huo; Baoguo Zhang; Haixiao Hu; Xiaopeng Hao; One-step fabrication of porous GaN crystal membrane and its application in energy storage. Scientific Reports, 2017, 7, 44063.

(9) Ruixian Yu; Guodong Wang; Yongliang Shao; Yongzhong Wu; Shouzhi Wang; Gang Lian; Baoguo Zhang; Haixiao Hu; Lei Liu; Lei Zhang and Xiaopeng Hao; From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors. Journal of Materials Chemistry C, 2019, 7, 14116-14122.

6. 授权及受理国家专利

(1) 一种水热腐蚀多孔衬底生长自支撑氮化镓(GaN)单晶的方法(授权CN201710601044.3

(2) 一种利用激光处理衬底生长低应力自支撑GaN单晶的方法(受理CN201810122199.3